IMBG120R090M1HXTMA1 - Silicon Carbide MOSFET, Single, N Channel, 26 A, 1.2 kV, 0.09 ohm, TO-263 (D2PAK) - INFINEON Kit Contents: 4mm to 12mm

Kit Contents: 4mm to 12mm

Gyroscope Range: ± 125°/s

MULTICOMP PRO - MAX540H245STR

Melting Temperature Max: 250°C

Tensile Strength N/m²: 80N/mm²

IMBG120R090M1HXTMA1 - Silicon Carbide MOSFET, Single, N Channel, 26 A, 1.2 kV, 0.09 ohm, TO-263 (D2PAK) - INFINEON Kit Contents: 4mm to 12mmChannel Type: N Channel Continuous Drain Current Id: 26A Drain Source On State Resistance: 0. 09ohm Drain Source Voltage Vds: 1. 2kV Gate Source Threshold Voltage Max: 4. 5V MOSFET Module Configuration: Single MSL: MSL 1 Unlimited No. of Pins: 7Pins On Resistance Rds(on): 0. 09ohm Operating Temperature Max: 175C Power Dissipation: 136W Power Dissipation Pd: 136W Product Range: CoolSiC Rds(on) Test Voltage: 18V Transistor Case Style: TO 263 (D2PAK)